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HMC784MS8GE

RF Switch ICs PDT 10W T/R Switch

HMC784MS8GE General Description

RF Switch IC General Purpose SPDT 4 GHz 50Ohm 8-MSOP-EP

Key Features

  • high p1dB output power: +28 dBm
  • high psat output power: +31 dBm
  • high Gain: 14.5 dB
  • high output ip3: +40 dBm
  • supply Voltage: +10 V @ 400 mA
  • 50 ohm matched input/output
  • Die size: 2.89 x 1.55 x 0.1 mm

Specifications

Product Category RF Switch ICs Switch Configuration SPDT
Minimum Frequency 0 Hz Maximum Frequency 4 GHz
Insertion Loss 1.3 dB Off Isolation - Typ 30 dB
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Mounting Style SMD/SMT Technology GaAs
Series HMC784 High Control Voltage 200 mV
Number of Switches Single Operating Supply Current 20 uA
Pd - Power Dissipation 1.217 W Product Type RF Switch ICs
Factory Pack Quantity 50 Subcategory Wireless & RF Integrated Circuits
Supply Voltage - Max 8 V Supply Voltage - Min 3 V
Unit Weight 0.004938 oz

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