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See Technical Specifications

HMC407MS8GE

GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz

Manufacturer:

Analog Devices, Inc
Mfr.Part #:

HMC407MS8GE
Datasheet:

HMC407MS8GE Datasheet (PDF)
packingQty:

Cut Tape,500
packingOption:

Cut Tape
tempRange:

-40 to 85C
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for HMC407MS8GE

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HMC407MS8GE General Description

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.

Key Features

Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required

Application

UNII
HiperLAN

Specifications

model	HMC407MS8GE	packingQty	Cut Tape,500
packingOption	Cut Tape	lifeCycle	production
tempRange	-40 to 85C	Product Category	RF Amplifier
Mounting Style	SMD/SMT	Type	Power Amplifiers
Technology	GaAs InGaP	Operating Frequency	5 GHz to 7 GHz
P1dB - Compression Point	25 dBm	Gain	15 dB
Operating Supply Voltage	5 V	NF - Noise Figure	5.5 dB
OIP3 - Third Order Intercept	37 dBm	Operating Supply Current	230 mA
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Series	HMC407	Frequency Range	5 GHz to 7 GHz
Input Return Loss	12 dB	Number of Channels	1 Channel
Pd - Power Dissipation	2 W	Product Type	RF Amplifier
Factory Pack Quantity	500	Subcategory	Wireless & RF Integrated Circuits
Test Frequency	5 GHz to 7 GHz	Unit Weight	0.007513 oz