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See Technical Specifications

HMC327MS8GETR

MMIC Power Amplifier SMT, 3 - 4 GHz

Manufacturer:

Analog Devices, Inc
Mfr.Part #:

HMC327MS8GETR
Datasheet:

HMC327MS8GETR Datasheet (PDF)
Frequency:

3GHz ~ 4GHz
P1dB:

27dBm
Gain:

21dB
Noise Figure:

5dB
EDA/CAD Models:

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HMC327MS8GETR General Description

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.

Key Features

Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count

Application

Wireless Local Loop

Specifications

Category	RF and WirelessRF Amplifiers	Series	-
Frequency	3GHz ~ 4GHz	P1dB	27dBm
Gain	21dB	Noise Figure	5dB
RF Type	WLL, WLAN	Voltage - Supply	5V
Current - Supply	250mA	Test Frequency	3.5GHz
Mounting Type	Surface Mount	Base Product Number	HMC327