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HMC326MS8GETR
GaAs InGaP HBT Driver Amplifier SMT, 3.0 - 4.5 GHz
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Manufacturer:
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Mfr.Part #:
HMC326MS8GETR
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Datasheet:
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packingQty:
Reel,500
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packingOption:
Reel
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tempRange:
-40 to 85C
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EDA/CAD Models:
Availability: 3822 PCS
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HMC326MS8GETR General Description
The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dBof gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.
Key Features
- Psat Output Power: +26 dBm
- > 40% PAE
- Output IP3: +36 dBm
- High Gain: 21 dB
- Vs: +5V
- Ultra Small Package: MSOP8G
Application
- Microwave Radios
- Broadband Radio Systems
- Wireless Local Loop Driver Amplifier
Specifications
model | HMC326MS8GETR | packingQty | Reel,500 |
packingOption | Reel | lifeCycle | production |
tempRange | -40 to 85C |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 3822 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $5.226 | $5.23 |
10+ | $4.586 | $45.86 |
30+ | $4.017 | $120.51 |
100+ | $3.632 | $363.20 |
500+ | $3.454 | $1,727.00 |
1000+ | $3.374 | $3,374.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for HMC326MS8GETR, guaranteed quotes back within 12hr.
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