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HMC197A

Frequency range up to 3GHz

HMC197A General Description

HMC197A is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) amplifier with high linearity and low noise figure characteristics. This RF amplifier operates in the frequency range of DC to 6 GHz, making it suitable for a variety of applications in the telecommunications, radar, and test and measurement industries.The HMC197A features a low noise figure of 0.6 dB and a high gain of 16 dB, providing excellent signal-to-noise ratio and signal amplification capabilities. It also offers high linearity with an output third-order intercept point (OIP3) of 28 dBm, making it suitable for high-performance communication systems that require precise signal amplification with minimal distortion.The device is housed in a compact SOT-89 package, which provides good thermal performance and ease of integration into existing circuit designs. It operates on a single supply voltage of 5V and has a low power consumption of 28 mA, making it suitable for battery-powered applications.

Key Features

  • Wide frequency range of DC to 5 GHz
  • Low insertion loss of 1.5 dB
  • High isolation of 30 dB
  • Small SOT26 package
  • Single positive supply voltage of 3V to 5V
  • Integrated RF chokes for DC blocking

Application

  • Radar systems
  • Satellite communication equipment
  • Wireless infrastructure
  • Radio frequency amplifiers
  • Microwave point-to-point digital radio
  • Test and measurement equipment

Specifications

Product Category ADI

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