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HMC1126-SX +BOM
GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz
SMD-
Manufacturer:
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Mfr.Part #:
HMC1126-SX
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Datasheet:
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PackingQty:
Tray,2
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PackingOption:
Tray
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TempRange:
-55 to 85C
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EDA/CAD Models:
Availability: 3274 PCS
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HMC1126-SX General Description
The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.
Key Features
- Output power for 1 dB compression (P1dB): 17.5 dB typical
- Saturated output power (PSAT): 21 dBm typical
- Gain: 11 dB typical
Application
- Test instrumentation
- Microwave radios and VSATs
- Military and space
- Telecommunications infrastructure
- Fiber optics
Specifications
model | HMC1126-SX | packingQty | Tray,2 |
packingOption | Tray | lifeCycle | production |
tempRange | -55 to 85C |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 3,274
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for HMC1126-SX, guaranteed quotes back within 12hr.
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