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HFA3127B

Bipolar Transistors - BJT

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HFA3127B General Description

RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC

Key Features

  • NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
  • Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
  • Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
  • Complete Isolation Between Transistors
  • Pin Compatible with Industry Standard 3XXX Series
  • Arrays

Specifications

Product Category RF Bipolar Transistors Technology Si
Transistor Polarity NPN DC Collector/Base Gain hfe Min 40
Collector- Emitter Voltage VCEO Max 8 V Emitter- Base Voltage VEBO 5.5 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 125 C
Configuration Penta Mounting Style SMD/SMT
Collector- Base Voltage VCBO 12 V Gain Bandwidth Product fT 5.5 GHz
Height 1.5 mm Length 10 mm
Maximum DC Collector Current 65 mA Pd - Power Dissipation 150 mW
Product Type RF Bipolar Transistors Subcategory Transistors
Width 4 mm Unit Weight 0.023492 oz

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Availability: 7072 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $14.116 $14.12
200+ $5.464 $1,092.80
500+ $5.271 $2,635.50
1000+ $5.177 $5,177.00

The prices below are for reference only.

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