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HFA3096B +BOM

Bipolar Transistors - BJT

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HFA3096B General Description

RF Transistor 3 NPN + 2 PNP 12V, 15V 65mA 8GHz, 5.5GHz 150mW Surface Mount 16-SOIC

Renesas Technology Corp Inventory

Key Features

  • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
  • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
  • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
  • Complete isolation between transistors
  • Pin compatible with industry standard 3XXX series arrays
  • Pb-free (RoHS compliant)
Renesas Technology Corp Original Stock
Renesas Technology Corp Inventory

Specifications

Product Category: Bipolar Transistors - BJT Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP Configuration: Penta
Collector- Emitter Voltage VCEO Max: 8 V Collector- Base Voltage VCBO: 12 V
Emitter- Base Voltage VEBO: 5.5 V Maximum DC Collector Current: 65 mA
Pd - Power Dissipation: 150 mW Gain Bandwidth Product fT: 5.5 GHz
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 40 Height: 1.5 mm
Length: 10 mm Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors Technology: Si
Width: 4 mm Unit Weight: 0.023492 oz

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In Stock: 6,896

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $11.548 $11.55
200+ $4.469 $893.80
480+ $4.314 $2,070.72
960+ $4.235 $4,065.60

The prices below are for reference only.

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