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FS200R12PT4PBOSA1

IGBT Module Trench Field Stop Full Bridge 1200 V 200 A 20 mW Chassis Mount Module

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FS200R12PT4PBOSA1 General Description

IGBT Module Trench Field Stop Full Bridge 1200 V 200 A 20 mW Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • Extended Operation Temperature T(vj op)
  • Low Switching Losses
  • Low V(CEsat)
  • V(CEsat) with positive Temperature Coefficient
  • 2.5 kV AC 1min Insulation
  • High Power Density
  • Isolated Base Plate
  • Standard Housing
  • Compact Modules
  • Easy and most reliable assembly
  • No Plugs and Cables required
  • Ideal for Low Inductive System Designs
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series EconoPACK™ 4
IGBT Type Trench Field Stop Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 200 A
Power - Max 20 mW Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 14 nF @ 25 V
Input Standard NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount
Base Product Number FS200R12 RHoS yes
PBFree yes HalogenFree no

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FS200R12PT4PBOSA1 Datasheet PDF

Preliminary Specification FS200R12PT4PBOSA1 PDF Download

FS200R12PT4PBOSA1 PDF Preview

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