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FQP6N60C +BOM

Explore the capabilities of the FQP6N60C, a member of the Advanced Q-FET C-Series, delivering N-channel MOSFET functionality at 600V

FQP6N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Key Features

  • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10V
  • Low gate charge (typical 16 nC)
  • Low Crss (typical 7 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Application

  • Lighting

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 5.5 A Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 16 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 125 W
Channel Mode Enhancement Series FQP6N60C
Configuration Single Fall Time 45 ns
Forward Transconductance - Min 4.8 S Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 45 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 15 ns Width 4.7 mm
Part # Aliases FQP6N60C_NL Unit Weight 0.068784 oz

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In Stock: 6,382

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.080 $1.08
10+ $0.920 $9.20
50+ $0.834 $41.70
100+ $0.734 $73.40
500+ $0.687 $343.50
1000+ $0.666 $666.00

The prices below are for reference only.