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FQP13N50C +BOM

FQP13N50C: 500V N-Channel Q-FET with Advanced Characteristics, C-Series

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FQP13N50C General Description

N-Channel 500 V 13A (Tc) 195W (Tc) Through Hole TO-220-3

Key Features

  • 13A, 500V, RDS(on)= 0.48Ω@VGS= 10 V
  • Low gate charge ( typical 43 nC)
  • Low Crss ( typical 20pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 13 A Rds On - Drain-Source Resistance 480 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 43 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 195 W
Channel Mode Enhancement Configuration Single
Fall Time 100 ns Forward Transconductance - Min 15 S
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 100 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 130 ns Typical Turn-On Delay Time 25 ns
Width 4.7 mm Part # Aliases FQP13N50C_NL
Unit Weight 0.068784 oz

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