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See Technical Specifications

FQD13N06

MOSFET QF 60V 140MOHM DPAK

Manufacturer:

onsemi
Mfr.Part #:

FQD13N06
Datasheet:

FQD13N06 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FQD13N06

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FQD13N06 General Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

10A, 60V, R_DS(on) = 140mΩ(Max.) @V_GS = 10 V, I_D = 5A
Low gate charge ( Typ. 5.8nC)
Low C_rss ( Typ. 15pF)
100% avalanche tested

Application

LCD TV
LED TV
Other Industrial

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	10 A	Rds On - Drain-Source Resistance	140 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Series	QFET
Configuration	Single	Fall Time	15 ns
Height	2.39 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	25 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	5 ns	Width	6.22 mm
Unit Weight	0.011640 oz