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FQD10N20LTF

N-Channel 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount DPAK

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FQD10N20LTF General Description

N-Channel 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount DPAK

Key Features

  • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A
  • Low Gate Charge (Typ. 13 nC)
  • Low Crss (Typ. 14 pF)
  • 100% Avalanche Tested
  • Low level gate drive requirement allowing direct operation from logic drivers

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 7.6 A Rds On - Drain-Source Resistance 290 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Series FQD10N20L
Configuration Single Fall Time 95 ns
Forward Transconductance - Min 9.6 S Height 2.39 mm
Length 6.73 mm Product Type MOSFET
Rise Time 150 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 13 ns Width 6.22 mm
Part # Aliases FQD10N20LTF_NL Unit Weight 0.011640 oz

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