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FP50R12KS4CBOSA1

IGBT Module Single 1200 V 70 A 360 W Chassis Mount Module

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FP50R12KS4CBOSA1 General Description

IGBT Module Single 1200 V 70 A 360 W Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • Low stray inductance module design
  • High reliability and power density
  • Copper base plate for optimized heat spread
  • Solderable pins
  • Low switching losses
  • High switching frequency
  • RoHS-compliant modules
  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility
  • Fast, reliable and low cost mounting concept
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series -
IGBT Type - Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 70 A
Power - Max 360 W Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Current - Collector Cutoff (Max) 5 mA Input Capacitance (Cies) @ Vce 3.3 nF @ 25 V
Input Standard NTC Thermistor Yes
Operating Temperature -40°C ~ 125°C Mounting Type Chassis Mount
Base Product Number FP50R12 RHoS yes
PBFree yes HalogenFree no
Product Category IGBT Modules Product Type IGBT Modules
Subcategory IGBTs Part # Aliases FP50R12KS4C SP000100410

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FP50R12KS4CBOSA1 Datasheet PDF

Preliminary Specification FP50R12KS4CBOSA1 PDF Download

FP50R12KS4CBOSA1 PDF Preview

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