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FOD819S

Phototransistor Optocouplers, High Speed, 4-Pin DIP

FOD819S General Description

The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.

Key Features

  • High Speed Performance ~ 30kHz
  • Current Transfer Ratio: 100% to 600%
  • Minimum BVCEO of 80V Guaranteed
  • Safety and Regulatory Approvals:
  • UL1577, 5,000 VACRMS for 1 Minute
  • DIN EN/IEC60747-5-5, 850V Peak Working Insulation Voltage

Application

  • Digital Logic Inputs
  • Microprocessor Inputs
  • Power Supply Monitor
  • Twisted Pair Line Receiver
  • Telephone Line Receiver

Specifications

Source Content uid FOD819S Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
HTS Code 8541.40.80.00 Factory Lead Time 34 Weeks
Date Of Intro 2017-11-03 Additional Feature UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min 80 V Configuration SINGLE
Current Transfer Ratio-Min 100% Dark Current-Max 100 nA
Forward Current-Max 0.05 A Forward Voltage-Max 1.4 V
Isolation Voltage-Max 5000 V JESD-609 Code e3
Mounting Feature SURFACE MOUNT Number of Elements 1
On-State Current-Max 0.03 A Operating Temperature-Max 110 °C
Operating Temperature-Min -55 °C Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Packing Method TUBE Power Dissipation-Max 0.15 W
Surface Mount YES Terminal Finish MATTE TIN

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