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See Technical Specifications

FOD3182SDV

3 A Output Current, High Speed MOSFET Gate Driver Optocoupler

Manufacturer: ON Semiconductor, LLC
Mfr.Part #: FOD3182SDV
Datasheet: FOD3182SDV Datasheet (PDF)
Case Outline: 709AC
MSL Temp (°C): 260
Container Type: BLKBG

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FOD3182SDV General Description

The FOD3182 is a 3A output current, high-speed MOSFET gate drive optocoupler. It consists of an aluminium gallium arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in Plasma Display Panels (PDPs), motor control inverter applications, and high performance DC-DC converters.
The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

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Key Features

High noise immunity characterized by 50kV/µs (Typical) common mode rejection
Guaranteed operating temperature range of -40°C to 100°C
3A minimum peak output current
Fast switching speed
210ns max. propagation delay
65ns max. pulse width distortion
Fast output rise/fall time
Offers lower dynamic power dissipation
250kHZ maximum switching speed
Wide Vcc operating range from 10V to 30V
Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
5,000V_rms, 1 minute isolation
Under voltage lockout protection (UVLO) with hysteresis - optimized for driving MOSFETs
Minimum creepage distance of 8.0mm
Minimum insulation thickness of 0.5mm
Minimum clearance distance of 10.0mm to 16mm (Option TV or TSV)
1,414 peak working insulation voltage (V_IORM)
UL and VDE (requires 'V' ordering option) approved