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FMMT723QTA +BOM

Bipolar Transistors - BJT 100V PNP Low Sat 625mW -1A 210mOhm

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FMMT723QTA General Description

Bipolar (BJT) Transistor PNP 100 V 1 A 200MHz 625 mW Surface Mount SOT-23-3

Key Features

  • BVCEO> -100V
  • IC = -1A High Continuous Collector Current
  • ICM= -2.5A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) <-330mV @ -1A
  • RCE(SAT) = 210mΩ for a Low Equivalent On-Resistance
  • 625mW Power Dissipation
  • hFE Characterized up to -1.5A for High Current Gain Hold-Up
  • Complementary NPN Type: FMMT624
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 36 Weeks
Collector Current-Max (IC) 1 A Collector-Base Capacitance-Max 20 pF
Collector-Emitter Voltage-Max 100 V Configuration SINGLE
DC Current Gain-Min (hFE) 250 JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.625 W Reference Standard AEC-Q101
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz Turn-off Time-Max (toff) 760 ns
Turn-on Time-Max (ton) 50 ns VCEsat-Max 0.33 V

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