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FMMT593TA

Bipolar (BJT) Transistor PNP 100 V 1 A 50MHz 500 mW Surface Mount SOT-23-3

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Bipolar (BJT) Transistor PNP 100 V 1 A 50MHz 500 mW Surface Mount SOT-23-3

- Mounting-Style: SMD/SMT

- Collector-Emitter-Saturation-Voltage: - 300 mV

- Maximum-DC-Collector-Current: 1 A

- DC-Collector-Base-Gain-hfe-Min: 100 at 1 mA at 5 V, 100 at 250 mA at 5 V, 100 at 500 mA at 5 V, 50 at 1 A at 5 V

- Pd-Power-Dissipation: 0.5 W

- Vce saturation: 300mV @ 50mA, 500mA

- Emitter-Base-Voltage-VEBO: -5 V

SWITCHING

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	34 Weeks	Collector Current-Max (IC)	1 A
Collector-Base Capacitance-Max	10 pF	Collector-Emitter Voltage-Max	100 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	50
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	0.5 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	50 MHz	VCEsat-Max	0.3 V