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See Technical Specifications

FGH40T120SMDL4

IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247-4

Manufacturer:

onsemi
Mfr.Part #:

FGH40T120SMDL4
Datasheet:

FGH40T120SMDL4 Datasheet (PDF)
IGBT Type:

Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

80 A
Current - Collector Pulsed (Icm):

160 A
EDA/CAD Models:

Request Free CAD Models for FGH40T120SMDL4

Email: [email protected]

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FGH40T120SMDL4 General Description

Using innovative field stop trench IGBT technology, ON Semiconductor^®’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

Key Features

FS Trench Technology, Positive Temperature Coefficient
Excellent Switching Performance due to Kelvin Emitter Pin
Low Saturation Voltage: V_CE(sat) = 1.8 V @ I_C = 40 A
100% of the Parts tested for I_LM(1)
High Input Impedance
RoHS Compliant

Specifications

Series	-	IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V	Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	160 A	Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	555 W	Switching Energy	2.24mJ (on), 1.02mJ (off)
Input Type	Standard	Gate Charge	370 nC
Td (on/off) @ 25°C	44ns/464ns	Test Condition	600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	65 ns	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	FGH40