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See Technical Specifications

FFSH5065A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, TO-247-2L

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FFSH5065A
Datasheet:

FFSH5065A Datasheet (PDF)
Technology:

SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):

650 V
Current - Average Rectified (Io):

60A
Voltage - Forward (Vf) (Max) @ If:

1.75 V @ 50 A
EDA/CAD Models:

Request Free CAD Models for FFSH5065A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FFSH5065A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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Key Features

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Application

Telecommunication
Cloud system
Industrial

Specifications

Category	Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes	Series	-
Technology	SiC (Silicon Carbide) Schottky	Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	60A	Voltage - Forward (Vf) (Max) @ If	1.75 V @ 50 A
Speed	No Recovery Time > 500mA (Io)	Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 650 V	Capacitance @ Vr, F	2530pF @ 1V, 100kHz
Mounting Type	Through Hole	Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	FFSH5065	Product Category:	Schottky Diodes & Rectifiers
Product:	Schottky Silicon Carbide Diodes	Mounting Style:	Through Hole
Configuration:	Single	Technology:	SiC
If - Forward Current:	50 A	Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.51 V	Ifsm - Forward Surge Current:	230 A
Ir - Reverse Current:	200 uA	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C	Packaging:	Tube
Pd - Power Dissipation:	429 W	Product Type:	Schottky Diodes & Rectifiers
Factory Pack Quantity:	30	Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V	Unit Weight:	0.187694 oz
feature-type	Schottky Diode	feature-material	SiC
feature-configuration	Single	feature-peak-reverse-repetitive-voltage-v	650
feature-maximum-continuous-forward-current-a	60	feature-peak-non-repetitive-surge-current-a	230
feature-peak-forward-voltage-v	1.75@50A	feature-peak-reverse-current-ua	200
feature-maximum-junction-ambient-thermal-resistance		feature-maximum-diode-capacitance-pf	2530(Typ)
feature-maximum-power-dissipation-mw	429000	feature-peak-reverse-recovery-time-ns
feature-packaging	Tube	feature-rad-hard
feature-pin-count	2	feature-cecc-qualified
feature-esd-protection		feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes