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See Technical Specifications

FDS6930A +BOM

N-Channel MOSFET Transistor

Manufacturer:

Onsemi
Mfr.Part #:

FDS6930A
Datasheet:

FDS6930A Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDS6930A

Email: [email protected]

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Tel: +852 95804164

FDS6930A General Description

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

5.5 A, 30 V
R_DS(ON) = 0.040 Ω @ V_GS = 10 V
R_DS(ON) = 0.055 Ω @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low R_DS(ON).
High power and current handling capability.

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	5.5 A	Rds On - Drain-Source Resistance	40 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDS6930A	Configuration	Dual
Fall Time	13 ns	Forward Transconductance - Min	12 S
Height	1.75 mm	Length	4.9 mm
Product Type	MOSFET	Rise Time	8 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	5 ns
Width	3.9 mm	Part # Aliases	FDS6930A_NL
Unit Weight	0.006596 oz