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FDS6900AS +BOM

Dual N-Channel PowerTrench® SyncFET™ 30V

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDS6900AS
Datasheet:

FDS6900AS Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

8
Configuration:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
EDA/CAD Models:

Request Free CAD Models for FDS6900AS

Email: [email protected]

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Tel: +852 95804164

FDS6900AS General Description

The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.

Key Features

Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V
R_DS(on) = 22mΩ @ V_GS = 10V
R_DS(on) = 28mΩ @ V_GS = 4.5V
Q1:
Optimized for low switching losses
Low Gate Charge (11nC typical)
6.9A, 30V
R_DS(on) = 27mΩ @ V_GS = 10V
R_DS(on) = 34mΩ @ V_GS = 4.5V
100% R_G (Gate Resistance) Tested

Application

This product is general usage and suitable for many different applications.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	8	Reach Compliance Code
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	8.2 A	Drain-source On Resistance-Max	0.022 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Qualification Status	COMMERCIAL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON