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FDS6898A

Mosfet Array 20V 9.4A 900mW Surface Mount 8-SOIC

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDS6898A
Datasheet:

FDS6898A Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS6898A

Email: [email protected]

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Tel: +852 95804164

FDS6898A General Description

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Key Features

9.4 A, 20 V
R_DS(ON) = 14 mΩ @ V_GS = 4.5 V
R_DS(ON) = 18 mΩ @ V_GS = 2.5 V
Low gate charge (16 nC typical)
High performance trench technology for extremely low R_DS(ON)
High power and current handling capability

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDS6898A	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	9.4 A	Drain-source On Resistance-Max	0.014 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2 W	Pulsed Drain Current-Max (IDM)	38 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON