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FDS4953

Dual P-Channel MOSFET with -30V rating in SO-8 package

Manufacturer:

Onsemi
Mfr.Part #:

FDS4953
Datasheet:

FDS4953 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDS4953

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FDS4953 General Description

FDS4953 is a P-channel MOSFET transistor designed for high-speed switching applications in electronic circuits. It has a drain-source voltage rating of 30V and a continuous drain current of 1.1A, making it suitable for a wide range of low to medium power applications. This MOSFET has a low on-resistance of 340mΩ at a gate voltage of -4.5V, providing efficient power handling capabilities.The FDS4953 has a gate threshold voltage of -1.6V to -3.5V, ensuring reliable turn-on and turn-off characteristics in switching operations. Its small package size and low capacitance contribute to the transistor's high-speed performance, making it ideal for applications that require fast switching speeds.This P-channel MOSFET is widely used in power management circuits, battery protection circuits, and load switching applications in various electronic devices. Its high efficiency and excellent thermal performance make it a popular choice for design engineers looking to optimize power consumption and minimize heat dissipation in their designs.

Key Features

Low on-resistance: 0.04 ohms
Low gate charge: 9 nC
Low input capacitance: 960 pF
Enhanced power dissipation: 1.9W
Ultra-low threshold voltage: 0.7V
Low drive requirement

Application

Power management systems
Battery charging systems
Portable electronics
LED lighting
Solar inverters
Motor control systems
Automotive electronics
Industrial automation systems
Pulse width modulation (PWM) applications
Switching voltage regulators

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	5 A	Rds On - Drain-Source Resistance	55 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	2 W
Channel Mode	Enhancement	Series	FDS4953
Configuration	Dual	Fall Time	9 ns
Forward Transconductance - Min	10 S	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	7 ns	Width	3.9 mm
Part # Aliases	FDS4953_NL	Unit Weight	0.006596 oz