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FDS3812 +BOM

Trans MOSFET N-CH 80V 3.4A 8-Pin SOIC N T/R

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FDS3812 General Description

Mosfet Array 80V 3.4A 900mW Surface Mount 8-SOIC

Key Features

  • 4.7 A, 80 V. RDS(ON) = 44 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 6 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays Series PowerTrench®
Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 3.4A Rds On (Max) @ Id, Vgs 74mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 634pF @ 40V Power - Max 900mW
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number FDS38

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