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FDMS8690

Product FDMS8690 is a N Channel MOSFET with a 9mΩ resistance at 14A and a 3V threshold voltage at 250uA

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FDMS8690 General Description

N-Channel 30 V 14A (Ta), 27A (Tc) 2.5W (Ta), 37.8W (Tc) Surface Mount 8-MLP (5x6), Power56

Key Features

Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 A

Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant

Application

OringFET / Load Switching

DC-DC Conversion

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 27 A Rds On - Drain-Source Resistance 7.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Series FDMS8690
Configuration Single Fall Time 19 ns
Height 0.8 mm Length 6 mm
Product Type MOSFET Rise Time 1.8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 8 ns
Width 5 mm Unit Weight 0.008148 oz

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Availability: 7302 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.927 $0.93
200+ $0.360 $72.00
500+ $0.347 $173.50
1000+ $0.341 $341.00

The prices below are for reference only.

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