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See Technical Specifications

FDMS3610S +BOM

Mosfet Array 25V 17.5A, 30A 1W Surface Mount Power56

Manufacturer:

onsemi
Mfr.Part #:

FDMS3610S
Datasheet:

FDMS3610S Datasheet (PDF)
Series:

PowerTrench®
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual) Asymmetrical
FET Feature:

Logic Level Gate
EDA/CAD Models:

Request Free CAD Models for FDMS3610S

Email: [email protected]

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Tel: +852 95804164

FDMS3610S General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Key Features

Q1: N-Channel
Max r_DS(on) = 5.0 mΩ at V_GS = 10 V, I_D = 17.5 A
Max r_DS(on) = 5.7 mΩ at V_GS= 4.5 V, I_D = 16 A
Q2: N-Channel
Max r_DS(on)= 1.8 mΩ at V_GS = 10 V, I_D = 30 A
Max r_DS(on) = 2.2 mΩ at V_GS= 4.5 V, I_D = 27 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant

Application

Server

Specifications

Series	PowerTrench®	Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual) Asymmetrical	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V	Current - Continuous Drain (Id) @ 25°C	17.5A, 30A
Rds On (Max) @ Id, Vgs	5mOhm @ 17.5A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 13V
Power - Max	1W	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	FDMS3610