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FDG410NZ

N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDG410NZ
Datasheet:

FDG410NZ Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDG410NZ

Email: [email protected]

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Tel: +852 95804164

FDG410NZ General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low r_DS(on) and gate charge (Q_g) in a small package.

Key Features

Max r_DS(on) = 70 mΩ at V_GS = 4.5 V, I_D = 2.2 A
Max r_DS(on) = 77 mΩ at V_GS = 2.5 V, I_D = 2.0 A
Max r_DS(on) = 87 mΩ at V_GS = 1.8 V, I_D = 1.8 A
Max r_DS(on) = 115 mΩ at V_GS = 1.5 V, I_D = 1.5 A
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low r_DS(on)
High power and current handling capability
Fast switching speed
Low gate charge
RoHS compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.2 A	Rds On - Drain-Source Resistance	70 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	400 mV
Qg - Gate Charge	7.2 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	420 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDG410NZ	Configuration	Single
Height	1.1 mm	Length	2 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	1.25 mm	Unit Weight	0.000988 oz