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See Technical Specifications

FDC697P

8A, 20V, 0.02OHM, P-CHANNEL MOSF

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDC697P
Datasheet:

FDC697P Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

8A (Ta)
EDA/CAD Models:

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FDC697P General Description

MOSFET, P, SMD, FLMP, SSOT-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:8A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.8V; Case Style:SSOT-6 FLMP; Termination Type:SMD; Pins, No. of:6; Power Dissipation:2mW; Voltage, Vds:-20V; Voltage, Vgs th Max:-1.5V

Key Features

–8 A, –20 V RDS(ON) = 20 mΩ @ VGS = –4.5 V RDS(ON) = 25 mΩ @ VGS = –2.5 V RDS(ON) = 35 mΩ @ VGS = –1.8 V
High performance trench technology for extremely low RDS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Rds On (Max) @ Id, Vgs	20mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	55 nC @ 4.5 V
Vgs (Max)	±8V	Input Capacitance (Ciss) (Max) @ Vds	3524 pF @ 10 V
FET Feature	-	Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount