This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDC654P +BOM

P-Channel PowerTrench® MOSFET, Logic Level, -30V, -3.6A, 75mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDC654P
Datasheet:

FDC654P Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC654P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC654P General Description

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench^® process. It has been optimized for battery power management applications.

Key Features

-3.6 A, -30 V
R_DS(ON) = 75 mΩ @ V_GS = -10 V
R_DS(ON) = 125 mΩ @ V_GS = -4.5 V
Low gate charge (6.2nC typical)
High performance trench technology for extremely low R_DS(ON)

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDC654P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	3.6 A	Drain-source On Resistance-Max	0.075 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	1.6 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON