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See Technical Specifications

DS1265Y-70+ +BOM

NVSRAM (Non-Volatile SRAM) Memory IC 8Mbit Parallel 70 ns 36-EDIP

Manufacturer:

Maxim Integrated
Mfr.Part #:

DS1265Y-70+
Datasheet:

DS1265Y-70+ Datasheet (PDF)
packingQty:

Tube,9
packingOption:

Tube
tempRange:

0 to 70C
EDA/CAD Models:

Request Free CAD Models for DS1265Y-70+

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

DS1265Y-70+ General Description

The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Key Features

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times of 70ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% V_CC operating range (DS1265Y)
Optional ±5% V_CC operating range (DS1265AB)
Optional industrial temperature range of -40°C to +85°C, designated IND