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See Technical Specifications

DS1220AB-200IND+

NVSRAM (Non-Volatile SRAM) Memory IC 16Kbit Parallel 200 ns 24-EDIP

Manufacturer:

Analog Devices, Inc
Mfr.Part #:

DS1220AB-200IND+
Datasheet:

DS1220AB-200IND+ Datasheet (PDF)
packingQty:

Tube,14
packingOption:

Tube
tempRange:

-40 to 85C

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

DS1220AB-200IND+ General Description

The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

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Key Features

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 2k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times of 100ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% V_CC operating range (DS1220AD)
Optional ±5% V_CC operating range (DS1220AB)
Optional industrial temperature range of -40°C to +85°C, designated IND