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DMN61D9UW-7 +BOM

N-Channel 60 V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323

Manufacturer:

Diodes Incorporated
Mfr.Part #:

DMN61D9UW-7
Datasheet:

DMN61D9UW-7 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

340mA (Ta)
EDA/CAD Models:

Request Free CAD Models for DMN61D9UW-7

Email: [email protected]

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Tel: +852 95804164

DMN61D9UW-7 General Description

The DMN61D9UW-7 is a high-performance N-channel MOSFET transistor that offers impressive power handling capabilities and efficiency. With a VDS rating of 30V and ID rating of 140A, this transistor is well-suited for applications that require handling high levels of power. The low RDS(ON) of 6.1 mΩ ensures minimal power loss and improved overall efficiency, making it an ideal choice for power management systems

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 5V	Rds On (Max) @ Id, Vgs	2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	0.4 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	28.5 pF @ 30 V
Power Dissipation (Max)	320mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	DMN61