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See Technical Specifications

DMN6040SSD-13

Diodes Inc DMN6040SSD-13 60V Dual N-Ch Enhancement MOSFET SOIC8

Manufacturer:

Diodes Incorporated
Mfr.Part #:

DMN6040SSD-13
Datasheet:

DMN6040SSD-13 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for DMN6040SSD-13

Email: [email protected]

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Tel: +852 95804164

DMN6040SSD-13 General Description

MOSFET, DUAL N-CH, 60V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 1.3W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Key Features

HIGH RELIABILITY

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	5 A	Rds On - Drain-Source Resistance	40 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	22.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Series	DMN6040
Configuration	Dual	Fall Time	4 ns
Forward Transconductance - Min	4.5 S	Product Type	MOSFET
Rise Time	8.1 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	20.1 ns	Typical Turn-On Delay Time	6.6 ns
Unit Weight	0.026455 oz