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See Technical Specifications

DMN10H120SE-13 +BOM

Single N-Channel 100 V 122 mOhm 5.2 nC 2.1 W Silicon SMT Mosfet - SOT-223

Manufacturer:

Diodes Incorporated
Mfr.Part #:

DMN10H120SE-13
Datasheet:

DMN10H120SE-13 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

3.6A (Ta)
EDA/CAD Models:

Request Free CAD Models for DMN10H120SE-13

Email: [email protected]

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Tel: +852 95804164

DMN10H120SE-13 General Description

MOSFET, N-CH, 3.6A, 100V, SOT-223; Trans; MOSFET, N-CH, 3.6A, 100V, SOT-223; Transistor Polarity: N Channel; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 3.6A; On Resistance Rds(on): 0.077ohm; Transistor Moun

Key Features

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	549 pF @ 50 V
Power Dissipation (Max)	1.3W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	DMN10