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CAS300M12BM2

Trans MOSFET N-CH SiC 1.2KV 423A 7-Pin Box

CAS300M12BM2 General Description

MOSFET MODULE, 1.2KV, PANEL; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 404A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 2.3V;

Specifications

Pbfree Code Yes Part Life Cycle Code Not Recommended
Reach Compliance Code Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 1200 V
Drain-source On Resistance-Max 0.0567 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 113 pF JESD-30 Code R-XUFM-X7
Number of Elements 2 Number of Terminals 7
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 1500 A
Surface Mount NO Terminal Form UNSPECIFIED
Terminal Position UPPER Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON CARBIDE

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