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BSM400GA170DLC +BOM

400A IGBT with 1700V capability

  • Manufacturer:

    Infineon

  • Mfr.Part #:

    BSM400GA170DLC

  • Datasheet:

    BSM400GA170DLC Datasheet (PDF) pdf-icon

  • Product:

    IGBT Silicon Modules

  • Configuration:

    Single Dual Emitter

  • Collector- Emitter Voltage VCEO Max:

    1.7 kV

  • Collector-Emitter Saturation Voltage:

    2.6 V

BSM400GA170DLC General Description

The BSM400GA170DLC is a power module developed by Mitsubishi Electric, designed for industrial applications, particularly in the field of power electronics and motor control. It is part of the company's IGBT modules series, combining the benefits of both IGBT and diode technologies in a single package.Key specifications of the BSM400GA170DLC include a maximum collector current of 400A and a collector-emitter voltage of 1700V, making it suitable for high-power and high-voltage applications. It also features a low saturation voltage and low switching losses, ensuring high efficiency and reliability in operation.The module is equipped with built-in temperature and overcurrent protection mechanisms to prevent overheating and damage to the device. It also has a compact and lightweight design, allowing for easy integration into various systems and equipment.

bsm400ga170dlc bsm400ga170dlc

Key Features

  • IGBT Type: Dual IGBT Module
  • Part Number: BSM400GA170DLC
  • Voltage: 1700V
  • Current: 400A
  • Package: 62mm
  • IGBT4: Generation 4 IGBT technology
bsm400ga170dlc bsm400ga170dlc

Application

  • Industrial motor drives
  • Renewable energy systems
  • Uninterruptible power supplies (UPS)
  • Electric vehicles
  • Automation systems
  • Railway traction systems
  • Welding equipment
  • Power factor correction systems
  • Solar inverters
bsm400ga170dlc bsm400ga170dlc

Specifications

Product Category IGBT Modules Product IGBT Silicon Modules
Configuration Single Dual Emitter Collector- Emitter Voltage VCEO Max 1.7 kV
Collector-Emitter Saturation Voltage 2.6 V Continuous Collector Current at 25 C 800 A
Gate-Emitter Leakage Current 200 nA Pd - Power Dissipation 3.12 kW
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Height 36.5 mm Length 106.4 mm
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Product Type IGBT Modules Factory Pack Quantity 10
Subcategory IGBTs Technology Si
Width 61.4 mm Part # Aliases SP000100714 BSM400GA170DLCHOSA1

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