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BSM180C12P3C202 +BOM

Discrete Semiconductor Modules CAUTION, Single Customers, Consider NCNR

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N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V	Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-	Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 50mA	Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 10 V	FET Feature	-
Power Dissipation (Max)	880W (Tc)	Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Base Product Number	BSM180
Product Category:	Discrete Semiconductor Modules	Product:	Power MOSFET Modules
Type:	SiC Power Module	Technology:	SiC
Vf - Forward Voltage:	1.6 V	Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 6 V, + 22 V	Mounting Style:	Screw Mounts
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 150 C
Fall Time:	45 ns	Id - Continuous Drain Current:	180 A
Operating Supply Voltage:	-	Pd - Power Dissipation:	880 W
Product Type:	Discrete Semiconductor Modules	Rise Time:	45 ns
Factory Pack Quantity:	12	Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel	Typical Turn-Off Delay Time:	165 ns
Typical Turn-On Delay Time:	30 ns	Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	5.6 V