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BSC093N04LSGATMA1

N-Channel 40 V 13A (Ta), 49A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5

BSC093N04LSGATMA1 General Description

N-Channel 40 V 13A (Ta), 49A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5

Specifications

Source Content uid BSC093N04LSGATMA1 Pbfree Code No
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 56 Weeks, 4 Days Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 10 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 13 A Drain-source On Resistance-Max 0.0093 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 196 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form FLAT
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Product Category MOSFET
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 49 A
Rds On - Drain-Source Resistance 9.3 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 35 W Channel Mode Enhancement
Tradename OptiMOS Series OptiMOS 3
Fall Time 2.8 ns Forward Transconductance - Min 34 S
Height 1.27 mm Length 5.9 mm
Product Type MOSFET Rise Time 2.4 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 16 ns
Typical Turn-On Delay Time 3.6 ns Width 5.15 mm
Part # Aliases BSC093N04LS G SP000387929 Unit Weight 0.003683 oz

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