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BSC077N12NS3GATMA1

Trans MOSFET N-CH 120V 13.4A 8-Pin TDSON EP T/R

BSC077N12NS3GATMA1 General Description

The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

Specifications

Source Content uid BSC077N12NS3GATMA1 Pbfree Code No
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 330 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 120 V
Drain Current-Max (ID) 13.4 A Drain-source On Resistance-Max 0.0077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 392 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form NO LEAD
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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