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BSC046N10NS3GATMA1

Trans MOSFET N-CH 100V 17A Automotive 8-Pin TDSON EP T/R

BSC046N10NS3GATMA1 General Description

Power Field-Effect Transistor, 17A I(D), 100V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

Specifications

Source Content uid BSC046N10NS3GATMA1 Pbfree Code No
Part Life Cycle Code Obsolete Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 350 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 17 A Drain-source On Resistance-Max 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 400 A Surface Mount YES
Terminal Finish TIN Terminal Form NO LEAD
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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