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BSC027N06LS5ATMA1

Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel

Manufacturer:

INFINEON
Mfr.Part #:

BSC027N06LS5ATMA1
Datasheet:

BSC027N06LS5ATMA1 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for BSC027N06LS5ATMA1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BSC027N06LS5ATMA1 General Description

Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Avalanche Energy Rating (Eas)	100 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	23 A	Drain-source On Resistance-Max	0.0027 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	400 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON