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BSC010NE2LS

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Manufacturer:

INFINEON
Mfr.Part #:

BSC010NE2LS
Datasheet:

BSC010NE2LS Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for BSC010NE2LS

Email: [email protected]

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Tel: +852 95804164

BSC010NE2LS General Description

N-Channel 25 V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7

Key Features

Optimized for Synchronous Rectification
35% lower RDS(on) than alternative devices
45% improvement of FOM over similar devices
Integrated Schottky-like diode
RoHS compliant - halogen free
MSL1 rated
Benefits
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

Application

SWITCHING

Specifications

Source Content uid	BSC010NE2LS	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	190 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	25 V
Drain Current-Max (ID)	40 A	Drain-source On Resistance-Max	0.0013 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	96 W	Pulsed Drain Current-Max (IDM)	400 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	FLAT
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	25 V	Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	1 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	64 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	96 W	Channel Mode	Enhancement
Tradename	OptiMOS	Fall Time	4.4 ns
Forward Transconductance - Min	85 S	Height	1.27 mm
Length	5.9 mm	Product Type	MOSFET
Rise Time	6 ns	Factory Pack Quantity	5000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	34 ns	Typical Turn-On Delay Time	6.7 ns
Width	5.15 mm	Part # Aliases	BSC1NE2LSXT SP000776124 BSC010NE2LSATMA1
Unit Weight	0.003880 oz