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BQ4011YMA-100 28-DIP Module (18.42x37.72)

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See Technical Specifications

BQ4011YMA-100

EAR99 Through Hole BQ4011 Tube ic memory 100GHz 100ns 37.72mm 50mA

Manufacturer:

TI
Mfr.Part #:

BQ4011YMA-100
Datasheet:

BQ4011YMA-100 Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.41
EDA/CAD Models:

Request Free CAD Models for BQ4011YMA-100

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BQ4011YMA-100 General Description

NVRAM Memory IC; Memory Type:NV SRAM; Interface Type:Parallel; Memory Size:256Kbit; Memory Organization:32K x 8; Access Time, Tacc:100ns; NVRAM Features:Internal Battery; Memory Voltage, Vcc:5 V; Supply Voltage Min:4.5V ;RoHS Compliant: Yes

Key Features

▪ Data retention in the absence of power▪ Automatic write-protection during power-up/power-down cycles▪ Industry-standard 28-pin 8K x 8 pinout▪ Conventional SRAM operation;unlimited write cycles▪ 10-year minimum data retentionin absence of power▪ Battery internally isolated untilpower is applied

Specifications

Source Content uid	BQ4011YMA-100	Pbfree Code	No
Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.41
Access Time-Max	100 ns	JESD-30 Code	R-PDMA-P28
Length	37.72 mm	Memory Density	262144 bit
Memory IC Type	NON-VOLATILE SRAM MODULE	Memory Width	8
Number of Functions	1	Number of Terminals	28
Number of Words	32768 words	Number of Words Code	32000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	70 °C
Operating Temperature-Min		Organization	32KX8
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Qualification Status	Not Qualified	Seated Height-Max	9.53 mm
Standby Current-Max	0.004 A	Supply Current-Max	0.075 mA
Supply Voltage-Max (Vsup)	5.5 V	Supply Voltage-Min (Vsup)	4.5 V
Supply Voltage-Nom (Vsup)	5 V	Surface Mount	NO
Technology	CMOS	Temperature Grade	COMMERCIAL
Terminal Form	PIN/PEG	Terminal Pitch	2.54 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Width	18.415 mm