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BPW76B

Phototransistors TO-18 450-1080nm +/-40 deg

email Email: [email protected]
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BPW76B General Description

Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can

Key Features

  • Package type: leaded
  • Package form: TO-18
  • Dimensions (in mm): Ø 4.7
  • High photo sensitivity
  • High radiant sensitivity
  • Suitable for visible and near infrared radiation
  • Fast response times
  • Angle of half sensitivity: ϕ = ± 40°
  • Base terminal connected
  • Hermetically sealed package
  • Flat glass window

    • Application

    • oDetector in electronic control and drive circuits

    Specifications

    Part Life Cycle Code Active Reach Compliance Code
    Additional Feature HIGH SENSITIVITY Coll-Emtr Bkdn Voltage-Min 70 V
    Configuration SINGLE Dark Current-Max 100 nA
    Infrared Range YES JESD-609 Code e3
    Light Current-Nom 1.2 mA Mounting Feature THROUGH HOLE MOUNT
    Number of Functions 1 On-State Current-Max 0.05 A
    Operating Temperature-Max 125 °C Operating Temperature-Min -55 °C
    Optoelectronic Device Type PHOTO TRANSISTOR Peak Wavelength 850 nm
    Power Dissipation-Max 0.25 W Response Time-Max 0.0000035 s
    Shape ROUND Size 3.9 mm
    Surface Mount NO Terminal Finish Matte Tin (Sn)

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