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BLF872

RF Mosfet 32 V 900 mA 300W LDMOST

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RF Mosfet 32 V 900 mA 300W LDMOST

Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
Peak envelope power load power PL(PEP) = 300 W
Gain Gp = 15 dB
Drain efficiency ηD = 43 %
Third order intermodulation distortion IMD3 = −28 dBc
Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
Average output power PL(AV) = 70 W
Gain Gp = 15 dB
Drain efficiency ηD = 30 %
Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency)
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
Designed for broadband operation (UHF band)
Excellent reliability
Internal input and output matching for high gain and optimum broadband operation
Source on underside eliminates DC isolators, reducing common-mode inductance
Easy power control

Source Content uid	BLF872	Part Life Cycle Code	Obsolete
Pin Count	4	Reach Compliance Code
ECCN Code	EAR99	Additional Feature	HIGH RELIABILITY
Case Connection	SOURCE	Configuration	COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min	65 V	FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND	JESD-30 Code	R-CDFM-F4
Number of Elements	2	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	200 °C
Polarity/Channel Type	N-CHANNEL	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Form	FLAT
Terminal Position	DUAL	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON