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BGSA12GN10E6327XTSA1

RF Switch IC Cellular, 3G, 4G SPDT 50Ohm PG-TSNP-10-1

BGSA12GN10E6327XTSA1 General Description

The BGSA12GN10 is a Single Pole Dual Throw (SPDT) RF antenna tuning switch optimized for low COFF enabling applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors.

Infineon Technologies Corporation Inventory

Key Features

  • High-linearity SPDT for antenna tuning switching applications
  • Ultra-Low R
  • ON
  • Ultra-Low C
  • OFF
  • High max RF voltage handling
  • Low harmonic generation
  • No power supply blocking required
  • Supply voltage: 1.65 to 3.6 V
  • Control voltage: 1.35 to 3.3 V (control high)
  • Suitable for EDGE / C2K / LTE / WCDMA Applications
  • 0.1 to 6.0 GHz coverage
  • Small form factor 1.1 mm x 1.5 mm
  • 400 μm pad pitch
  • RoHS and WEEE compliant package
Infineon Technologies Corporation Original Stock

Specifications

Category RF and WirelessRF Switches Series -
RF Type Cellular, 3G, 4G Topology -
Circuit SPDT Frequency Range 100MHz ~ 5GHz
Isolation 20dB Insertion Loss 0.39dB
Test Frequency 2.69GHz P1dB -
IIP3 - Features DC Blocked, Single Line Control
Impedance 50Ohm Voltage - Supply 1.8V ~ 3.6V
Operating Temperature -30°C ~ 85°C Mounting Type Surface Mount
Base Product Number BGSA12 RHoS yes
PBFree yes HalogenFree yes

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BGSA12GN10E6327XTSA1 Datasheet PDF

Preliminary Specification BGSA12GN10E6327XTSA1 PDF Download

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