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See Technical Specifications

BGS18MA12E6327XTSA1

RF Switch SP8T 100MHz to 6GHz 12dB 12-Pin ATSLP EP T/R

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BGS18MA12E6327XTSA1
Datasheet:

BGS18MA12E6327XTSA1 Datasheet (PDF)
RF Type:

LTE, W-CDMA
Circuit:

SP8T
Frequency Range:

100MHz ~ 6GHz
Isolation:

26dB
EDA/CAD Models:

Request Free CAD Models for BGS18MA12E6327XTSA1

Email: [email protected]

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Tel: +852 95804164

BGS18MA12E6327XTSA1 General Description

MIPI 2.0 SP8T switch for LTE diversity, Tx and LAA applications This SP8T RF switch is a perfect solution for multimode handsets based on LTE, WCDMA and TDCDMA. It is based on Infineon’s proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system sensitivity, the coverage of LTE Tx power and 6 GHz enables very broad application. It features DC-free RF ports, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on-chip MIPI RFFE 2.0 controller is fully compatible with industry standard.

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Key Features

0.1 to 6 GHz coverage for LTE and LAA application
LTE TX power handling capabilities
Ultra low insertion loss: 0.78 dB at Band 42
Small form factor 1.1mm x 1.9mm
Fully compatible with MIPI 2.0 RFFE standard
No decoupling capacitors required if no DC applied on RF lines
Low harmonic generation
High port-to-port isolation
On-chip control logic including ESD protection
No power supply blocking required
High EMI robustness
RoHS and WEEE compliant package

Specifications

Category	RF and WirelessRF Switches	Series	-
RF Type	LTE, W-CDMA	Topology	-
Circuit	SP8T	Frequency Range	100MHz ~ 6GHz
Isolation	26dB	Insertion Loss	1.2dB
Test Frequency	6GHz	P1dB	-
IIP3	-	Features	DC Blocked
Impedance	50Ohm	Voltage - Supply	1.65V ~ 1.95V
Operating Temperature	-40°C ~ 85°C	Base Product Number	BGS18MA12
RHoS	yes	PBFree	yes
HalogenFree	yes