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BD675 +BOM

Bipolar (BJT) Transistor NPN - Darlington 45 V 4 A 40 W Through Hole TO-126

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Bipolar (BJT) Transistor NPN - Darlington 45 V 4 A 40 W Through Hole TO-126

High DC Current Gain h_FE = 750 (Min) @ I_C
= 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
Pb-Free Packages are Available

Source Content uid	BD675	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	4 Weeks	Collector Current-Max (IC)	4 A
Collector-Emitter Voltage-Max	45 V	Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)	750	JEDEC-95 Code	TO-225AA
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	235
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	40 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	Tin/Lead (Sn/Pb)	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	10 MHz