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See Technical Specifications

AUIRFP4110

Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

AUIRFP4110
Datasheet:

AUIRFP4110 Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for AUIRFP4110

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

AUIRFP4110 General Description

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	9620 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	370W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	AUIRFP4110	RHoS	yes
PBFree	yes	HalogenFree	no
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	120 A
Rds On - Drain-Source Resistance	3.7 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	210 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	370 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Configuration	Single
Fall Time	88 ns	Forward Transconductance - Min	160 S
Height	20.7 mm	Length	15.87 mm
Product Type	MOSFET	Rise Time	67 ns
Factory Pack Quantity	400	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	78 ns
Typical Turn-On Delay Time	25 ns	Width	5.31 mm
Unit Weight	0.211644 oz

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Ratings and Reviews

S**e 08/17/2022

I am amazed by Avaq's quick and efficient delivery service. My order of MT40A1G16TB-062E:F electronic components arrived in perfect condition, showcasing their commitment to customer satisfaction. - David R.

R**e 11/17/2020

fast transportation, very good product, thanks

D**n 08/13/2020

Okay, until i checked.

E**n 05/15/2020

Everything is super fast, ordered 10.06 received 22.06, the goods are good can be taken. Recommend, seller 5 + + + + + + + + + + + +